Optical properties for the Mott transition in VO2
Optical properties for the Mott transition in VO2
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DOI：
10.1063/1.3696031
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发表时间：
2012-03-01
期刊：
影响因子：
1.6
通讯作者：
Noh, Taejong
中科院分区：
文献类型：
--
作者：
Kang, Manil;Kim, Sok Won;Noh, Taejong
从介电函数、光学电导率、等离子体能量和电导率等方面分析了VO 2薄膜的一级金属-绝缘体相变（MIT）与结构相变（SPT）之间的关系。VO 2薄膜的MIT和SPT温度分别约为68和75 ℃，中间相存在于68和75 ℃之间。光学和电学结果表明，VO 2薄膜中的一阶MIT不是由SPT驱动的。版权所有2012作者。本文是在知识共享署名3.0未移植许可证下发布的。[http：//dx.doi.org/10.1063/1.3696031]
The relationship between the first-order metal-insulator transition (MIT) and the structural phase transition (SPT) in VO2 film is analyzed by dielectric function, optical conductivity, plasma energy, and electrical conductivity. The MIT and SPT temperatures in VO2 films were approximately 68 and 75 degrees C, respectively, with an intermediate phase existing between 68 and 75 degrees C. The optical and electrical results indicate that the first-order MIT in VO2 films is not driven by the SPT. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.3696031]