Experimental Analysis of Rotary Freestanding Triboelectric Nanogenerators

Experimental Analysis of Rotary Freestanding Triboelectric Nanogenerators
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旋转独立式摩擦纳米发电机的实验分析

DOI:
10.1109/powermems54003.2021.9658403
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发表时间:
2021
期刊:
2021 IEEE 20th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS) conference proceeding
影响因子:
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通讯作者:
Miyazaki Koji
Miyazaki Koji
中科院分区:
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文献类型:
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作者:
Chatar Keenan;Uehara Shu;Kojima Hiroki;Miura Asuka;Yabuki Tomohide;Miyazaki Koji

文献摘要

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在本文中,我们设计,开发和测试旋转独立式摩擦电纳米发电机(TENGs)从机械旋转中获取能量。目标是表征能量收集所涉及的基本过程,并全面了解TENG设备的开发过程。搭建了一个实验平台,用于安装、测试和分析TENG的电气特性。为了测试电气性能,创建了具有不同设计和测量参数的几个版本的TENG。我们测量了改变直径(50,75,100 mm)和改变刀片数量(4,8和12刀片)的影响。我们还分析了改变转速,施加扭矩和电极材料对输出性能的影响。此外,我们还测量和表征了薄膜MEMS沉积技术的性能,通过沉积用于TENG的氧化铝(Al2O3)层和铝(Al)电极层。在1000 RPM和0.04 Nm的施加扭矩下,12片100 mm TENG产生180 VOC的开路电压和10μA的短路电流。的Al2O3薄膜阻挡层表现出的电流增加了两倍,电压输出增加了三倍的测试TENG设备。
In this paper, we design, develop, and test rotary freestanding triboelectric nanogenerators (TENGs) for harvesting energy from mechanical rotation. The objective is characterizing the fundamental processes involved in energy harvesting and obtaining a thorough understanding of the development process for TENG devices. An experimental testbed was built for mounting, testing, and analyzing the TENG electrical characteristics. To test the electrical performance, several versions of TENGs were created with varying design and measurement parameters. We measured the effects of changing the diameter (50, 75, 100mm) and changing the number of blades (4, 8 and 12-blade). We also analyzed the effect of changing RPM, applied torque and electrode materials on the output performance produced. Additionally, we also measured and characterized the performance of thin-film MEMS deposition techniques by depositing an Aluminum Oxide (Al2O3) layer and Aluminum (Al) electrode layer for the TENGs. The 12-blade 100mm TENG produced an open circuit voltage of 180VOCand a short circuit current of 10μA at 1000RPM and 0.04Nm applied torque. The Al2O3thin-film blocking layer exhibited a two-fold increase in current and a three-fold increase in voltage output for the tested TENG devices.