Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures
Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures
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DOI：
10.1103/physrevb.77.214435
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发表时间：
2007-08
影响因子：
3.7
通讯作者：
P. Hai;Yusuke Sakata;M. Yokoyama;S. Ohya;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
P. Hai;Yusuke Sakata;M. Yokoyama;S. Ohya;Masaaki Tanaka
我们证明了在全外延MnAs铁磁金属/ GaAs半导体/ GaAs：MnAs颗粒混合异质结构中的弹道输运自旋阀效应。GaAs：MnAs材料在GaAs基质中含有铁磁MnAs纳米颗粒，并充当自旋注入器和自旋检测器。虽然GaAs/MnAs界面的势垒高度被发现是非常小的，观察到相对较大的磁阻。这一结果表明，通过使用弹道输运，我们可以实现大的自旋阀效应，而无需在铁磁金属/半导体界面处插入高隧道势垒。
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a GaAs matrix, and acts as a spin injector and a spin detector. Although the barrier height of the GaAs/MnAs interface was found to be very small, relatively large magnetoresistance was observed. This result shows that by using ballistic transport, we can realize a large spin valve effect without inserting a high tunnel barrier at the ferromagnetic metal / semiconductor interface.