The g-Values of Defects in Amorphous C, Si and Ge
The g-Values of Defects in Amorphous C, Si and Ge
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非晶态 C、Si 和 Ge 缺陷的 g 值
DOI：
10.1143/jjap.20.l673
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发表时间：
1981
影响因子：
1.5
通讯作者：
T. Shimizu
中科院分区：
文献类型：
--
作者：
N. Ishii;M. Kumeda;T. Shimizu
用EHT方法计算了非晶态C、Si和Ge悬空键和非晶态Si弱键的ESR信号g值。计算了键角、键长和二面角对非晶结构波动引起的g值变化的影响，发现键角的变化主导了非晶结构波动引起的g值变化。虽然计算的g值取决于簇大小，但结果对于悬垂键和弱键的定性考虑是有用的。
The g-values of the ESR signal have been calculated for dangling bonds in amorphous C, Si and Ge and for weak bonds in amorphous Si by using the EHT method. Effects on g-values of changing the bond angle, bond length and dihedral angle have been calculated and found that the change of g-values due to fluctuations of the amorphous structure is dominated by the change of the bond angle. Although the calculated g-values depend on the cluster size, the results are useful for qualitative considerations on the dangling bonds and the weak bonds.