Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions
Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions
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DOI：
10.1063/1.1769082
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发表时间：
2004-06
影响因子：
4
通讯作者：
S. Kämmerer;Andy Thomas;A. Hütten;G. Reiss
中科院分区：
文献类型：
--
作者：
S. Kämmerer;Andy Thomas;A. Hütten;G. Reiss
由于过去六年中对 100% 自旋极化半和全霍斯勒化合物的理论预测不断增长，霍斯勒合金成为未来磁电子和自旋电子应用最有前途的材料类别之一。我们已将 Co2MnSi 作为全 Heusler 化合物系列的代表，作为一种磁性电极集成到磁性隧道结中。选择的制备策略是在室温下将 Co2MnSi 溅射到 V 缓冲层上，这有助于 (110) 织构的形成，然后直接沉积 Al 阻挡层。对 Al 阻挡层进行等离子体氧化后，随后的退火会 (1) 形成织构，(2) 在 Co2MnSi 内形成适当的原子排序，(3) 使 AlOx 阻挡层均匀化。结果表明，从室温到 10K，铁磁电极的磁开关都能得到很好的控制。由此产生的含磁 Co2MnSi 的隧道磁阻效应振幅...
As a consequence of the growing theoretical predictions of 100% spin-polarized half- and full-Heusler compounds over the past six years, Heusler alloys are among the most promising materials class for future magnetoelectronic and spintronic applications. We have integrated Co2MnSi, as a representative of the full-Heusler compound family, as one magnetic electrode into magnetic tunnel junctions. The preparation strategy has been chosen so as to sputter Co2MnSi at room temperature onto a V-buffer layer, which assists in (110) texture formation, and to deposit the Al-barrier layer directly thereafter. After plasma oxidizing the Al-barrier layer, subsequent annealing leads (1) to the texture formation and (2) to the appropriate atomic ordering within the Co2MnSi, and (3) homogenizes the AlOx barrier. It is shown that the magnetic switching of the ferromagnetic electrodes is well controlled from room temperature down to 10K. The resulting tunnel magnetoresistance-effect amplitude of the Co2MnSi containing magn...