284-300nm Quaternary InAlGaN based Deep Ultraviolet Light-Emitting Diodes on Si (111) Substrates
284-300nm Quaternary InAlGaN based Deep Ultraviolet Light-Emitting Diodes on Si (111) Substrates
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Si (111) 衬底上的 284-300nm 四元 InAlGaN 基深紫外发光二极管
DOI：
10.1143/apex.4.061002
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发表时间：
2011
影响因子：
2.3
通讯作者：
H.Hirayama
中科院分区：
文献类型：
--
作者：
S.Fujikawa;H.Hirayama
采用低压金属有机物化学气相沉积（LP-MOCVD）技术在Si（111）衬底上制备了280-300 nm波段四元InAlGaN基深紫外（DUV）发光二极管（LED）。在硅衬底上生长AlN的初始阶段，采用氨脉冲流生长方法，以实现薄AlN层的低穿透位错密度。在室温连续波（CW）操作下，我们从DUV LED在284和300 nm之间的波长处获得单峰光谱。预计在不久的将来，通过去除Si衬底来增加光提取，可以获得低成本和大尺寸的DUV LED。
We have demonstrated 280–300-nm-band quaternary InAlGaN based deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on Si (111) substrates, grown by low-pressure metal–organic chemical vapor deposition (LP-MOCVD). An ammonia pulsed-flow growth method was used in the initial stages of AlN growth on Si substrates in order to achieve low threading dislocation densities with thin AlN layer. We obtained single-peaked spectra from the DUV LEDs at wavelengths between 284 and 300 nm under room temperature continuous-wave (cw) operation. It is expected that low-cost and large-size DUV LEDs could become available in the near future by increasing light-extraction by removing the Si substrate.