Electrical properties of platinum-hydrogen complexes in silicon
Electrical properties of platinum-hydrogen complexes in silicon
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硅中铂氢配合物的电学性质
DOI：
10.1103/physrevb.55.16176
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发表时间：
1997
影响因子：
3.7
通讯作者：
H. Lemke
中科院分区：
文献类型：
--
作者：
J.;E. Sveinbjörnsson;W. Jost;J. Weber;H. Lemke
用深能级瞬态谱研究了n型和p型硅中氢与铂的相互作用。通过湿化学蚀刻或在晶体生长期间引入氢。在这两种情况下，我们发现氢只与铂形成电活性络合物。确定了四个与铂-氢相关的深能级：E（90）在E C-0.18 eV，E（250）在E C-0.50 eV，H（150）在E V+ 0.30 eV，和H（210）在E V+ 0.40 eV。这些能级属于至少三种不同的铂-氢络合物。能级E（250）与掺杂Pt的Si中所谓的中间带隙能级相同，其被认为控制掺杂Pt的硅中的少数载流子寿命。能级H（150）是一种受主，在氢化后存在于n型和p型样品中。它属于铂-氢络合物，其含有比负责其他氢相关能级的络合物更多的氢原子。在高于600 K的温度下退火导致所有铂-氢相关缺陷的完全解离，并且置换铂浓度完全恢复。
The interaction between hydrogen and platinum is studied in n-and p-type silicon using deep-level transient spectroscopy. Hydrogen is introduced by wet-chemical etching or during crystal growth. In both cases we find that hydrogen forms only electrically active complexes with platinum. Four platinum-hydrogen related deep levels are identified: E (90) at E C-0.18 eV, E (250) at E C-0.50 eV, H (150) at E V+ 0.30 eV, and H (210) at E V+ 0.40 eV. These levels belong to at least three different platinum-hydrogen complexes. Level E (250) is identical to the so-called midgap level in Pt-doped Si, which is believed to control the minority-carrier lifetime in Pt-doped silicon. Level H (150) is an acceptor and is present both in n-and p-type samples after hydrogenation. It belongs to a platinum-hydrogen complex which contains more hydrogen atoms than the complexes responsible for the other hydrogen-related levels. Annealing at temperatures above 600 K results in a complete dissociation of all the platinum-hydrogen related defects and the substitutional platinum concentration is fully restored.