Crystal-plasticity based thermo-mechanical modeling of Al-components in integrated circuits
Crystal-plasticity based thermo-mechanical modeling of Al-components in integrated circuits
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DOI：
10.1016/j.commatsci.2014.03.020
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发表时间：
2014-11
影响因子：
3.3
通讯作者：
F. Meier;C. Schwarz;E. Werner
中科院分区：
文献类型：
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作者：
F. Meier;C. Schwarz;E. Werner
对集成电路（ic）性能和耐用性日益增长的需求要求了解可能的故障机制。集成电路损坏的一个主要原因是由于电流脉冲引起的相关材料的热机械负荷。热膨胀的不匹配导致应力产生裂纹，从而导致短路和组件功能的丧失。本文研究了铝导体溅射在硅衬底上，被层间介质包围，并被带有钝化层的铝金属化板覆盖的三维模型组件的一系列数值模拟。研究了不同导体路径的几何形状。模型总成由循环热流加载。利用Abaqus/Standardsolver结合用户定义的材料程序解决了热力学问题，该程序考虑了铝的微观结构和晶粒取向，热流，热膨胀和温度相关的材料行为。研究了层间介质和不同导体路径几何形状内应力和应变的发展，并与实验结果进行了比较。像表面粗化和裂纹萌生这样的观察结果可以定性准确地预测。
Growing demands on performance and durability of integrated circuits (ICs) require an understanding of possible failure mechanisms. One main cause for damage of ICs arises from thermo-mechanical loads of the involved materials as a result of current pulses. The mismatch in thermal expansion leads to stresses which cause crack initiation and, consequently, short circuits and the loss of functionality of the assembly.This study presents a series of numerical simulations using a three dimensional model assembly considering aluminum conductors sputtered on a silicon substrate, surrounded by an interlayer dielectric and covered by an aluminum metallization plate with passivation layer. Different conductor path geometries are investigated. The model assembly is loaded by a cyclic heat flow. The thermo-mechanical problem is solved utilizing the Abaqus/Standardsolver in combination with a user-defined material routine which takes into account the microstructure and the grain orientation of the aluminum, heat flow, thermal expansion and temperature dependent material behavior. The development of stresses and strains within the interlayer dielectric and within the different conductor path geometries is investigated and compared with experimental results. Observations like surface roughening and crack initiation can be predicted qualitatively correct.