Experimental investigation on oxidation kinetics of germanium by ozone
Experimental investigation on oxidation kinetics of germanium by ozone
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DOI：
10.1016/j.apsusc.2016.08.123
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发表时间：
2016-12
影响因子：
6.7
通讯作者：
Xiaolei Wang;Zhiqian Zhao;J. Xiang;Wenwu Wang;Jing Zhang;Jing Zhang;Chao Zhao;Tianchun Ye
中科院分区：
文献类型：
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作者：
Xiaolei Wang;Zhiqian Zhao;J. Xiang;Wenwu Wang;Jing Zhang;Jing Zhang;Chao Zhao;Tianchun Ye
实验研究了低温（≤400 °C）下锗表面臭氧氧化动力学。生长过程分为两个区域：初始线性生长区和随后的抛物线生长区。GeOx厚度与氧化时间的关系曲线服从众所周知的Deal-Grove或线性抛物线模型。线性生长区包含氧原子与最外层Ge层的表面键和背键的反应。实验估计其激活能为0.06eV。如此小的激活能表明线性生长区几乎是无势垒的，抛物线生长区开始于氧原子扩散进入第二最外层Ge层的背键。该过程的活化能为0.54eV。此外，在臭氧氧化中，穿过GeOx膜的不是O3分子，而是O自由基。
Oxidation kinetics of germanium surface by ozone at low temperature (≤400 °C) is experimentally investigated. The growth process contains two regions: initial linear growth region and following parabolic growth region. The GeOxthickness vs. oxidation time plot obeys the well-known Deal-Grove or linear parabolic model. The linear growth region contains reaction of oxygen atoms with surface bond and back bonds of outmost Ge layer. And the activation energy is experimentally estimated to be 0.06 eV. Such small activation energy indicates that the linear growth region is nearly barrier-less. The parabolic growth region starts when the oxygen atoms diffuse into back bonds of second outmost Ge layers. And the activation energy for this process is found to be 0.54 eV. Furthermore, in the ozone oxidation it is not O3molecules but O radicals that go through the GeOxfilm.