Characteristics of Interface-Modified Josephson Junctions Fabricated under Various Etching Conditions
Characteristics of Interface-Modified Josephson Junctions Fabricated under Various Etching Conditions
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不同蚀刻条件下制备的界面改性约瑟夫森结的特性
DOI：
10.1143/jjap.39.l284
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
H. Hayakawa
中科院分区：
文献类型：
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作者：
M. Horibe;Y. Inagaki;Kazuhiro Yoshida;Gen;N. Hayashi;A. Fujimaki;H. Hayakawa
我们研究了工艺参数对基于YBa_2Cu_3Ox的界面改性结（IMJ）电学性能的影响。隧道势垒通过电子回旋共振（ECR）等离子体蚀刻工艺和随后的真空退火来产生。我们已经发现，时间和加速电压（Vacc）的蚀刻序列，其中的斜坡边缘的几何形状被定义，是非常重要的参数的障碍形成。增加刻蚀时间和加速电压会导致临界电流密度降低。通过将这些参数设置在适当的值，我们可以控制IMJ的临界电流。我们还发现，在700 V以上的较高加速电压下制备的高结电阻IMJ具有准粒子通过局域态的输运机制。的X射线光谱分析表明，加速电压高于700 V的势垒的厚度增加，而那些低于700 V的影响势垒电阻率和厚度。
We have studied the influence of process parameters on electrical properties for interface-modified junctions (IMJs) based on YBa2Cu3Ox. Tunnel barriers are produced by an electron cyclotron resonance (ECR) plasma etching process and subsequent vacuum annealing. We have found that time and accelerating voltage (Vacc) in the etching sequence, in which the ramp-edge geometry is defined, are very important parameters for the barrier formation. Increasing the etching time and accelerating voltage lead to the reduction of critical current densities. By setting these parameters at appropriate values, we can control the critical current of the IMJs. We have also found that the IMJs with high junction resistance, which are fabricated at higher accelerating voltages above 700 V, have transport mechanisms via localized states for quasi particles. The X-ray photo spectroscopy analysis suggests that accelerating voltages above 700 V enhance the thickness of the barrier, while those below 700 V affect both barrier resistivity and thickness.