Influence of contact resistance and heat leakage in the determination of the dimensionless figure of merit via duo-impedance spectroscopy
Influence of contact resistance and heat leakage in the determination of the dimensionless figure of merit via duo-impedance spectroscopy
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DOI：
10.35848/1347-4065/ac1f48
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发表时间：
2021-10-01
影响因子：
1.5
通讯作者：
Hasegawa, Yasuhiro
中科院分区：
文献类型：
--
作者：
Hirabayashi, Shinya;Hasegawa, Yasuhiro
研究了多晶铋作为基本热电材料与铜电极之间的接触电阻对阻抗谱（IS）无量纲品质因数（zT）的影响。使用两种粘合剂的阻抗的频率依赖性是在300 K下在适当的交流电下测量的，因为相对于焦耳热，需要相当大的珀耳帖热来精确估计zT。通过duo-IS方法，使用Ag环氧树脂和焊料，在300 K下的zT分别估计为0.126 +/- 0.004和0.130 +/- 0.002。还估算了zT在300 ~ 30 K范围内的温度依赖性，由于信噪比较高，zT > 0.01是一种实用的方法。duo-IS方法对于基于适当的配置在整个温度区域中估计zT是非常宝贵的。
The influence of contact resistance between a polycrystalline bismuth as a basic thermoelectric material and electrodes made of copper using binders of Ag epoxy and conventional solder was investigated to estimate the dimensionless figure of merit (zT) via impedance spectroscopy (IS). The frequency dependence of the impedance using both binders was measured at 300 K under an appropriate alternating current because a considerably larger Peltier heat was required, relative to Joule heat, for estimating the zT precisely. Through the duo-IS method, zT at 300 K was estimated to be 0.126 +/- 0.004 and 0.130 +/- 0.002 using the Ag epoxy and solder, respectively. The temperature dependence of zT from 300 to 30 K was also estimated, and zT > 0.01 was a practical based on this technique, owing to its signal-noise ratio. The duo-IS method is invaluable for estimating zT in the entire temperature region based on an appropriate configuration.