Micron-scale inkjet-assisted digital lithography for large-area flexible electronics
Micron-scale inkjet-assisted digital lithography for large-area flexible electronics
复制标题
用于大面积柔性电子产品的微米级喷墨辅助数字光刻
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
S. Silva
中科院分区：
文献类型：
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作者：
R. Sporea;A. S. Alshammari;S. Georgakopoulos;J. Underwood;M. Shkunov;S. Silva
大面积电子产品需要经济高效且精确的电极图案。我们展示了一种能够形成微米级间隙的简单电极图案化技术，与目前的可喷射金属墨水组合相比，该技术可以图案化更多种类的金属，并且不需要高温烧结步骤。然而，这种方法可能会产生间隙尺寸的较大变化，从而导致晶体管漏极电流不一致且不可再现。我们认为源栅晶体管（SGT）非常适合这种技术，因为它们具有独立于源漏分离的饱和漏极电流，因此尽管间隙尺寸不一致，但仍可提高电流均匀性。
Large-area electronics require cost-effective yet precise patterning of electrodes. We demonstrate a simple electrode patterning technique capable of micron-scale gap formation, that allows the patterning of a larger variety of metals than the current portfolio of jettable metallic ink comprises and does not require a high-temperature sintering step. However, this method can produce large variations in gap size resulting in inconsistent and irreproducible transistor drain current. We propose that source-gated transistors (SGTs) are well suited to this technique, as they have a saturated drain current independent of source-drain separation, thus leading to improved current uniformity despite inconsistencies in gap size.