An analysis of false turn-on mechanism on high-frequency power devices
An analysis of false turn-on mechanism on high-frequency power devices
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DOI：
10.1109/ecce.2015.7309976
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发表时间：
2015-10
期刊：
影响因子：
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通讯作者：
H. Ishibashi;Akihiro Nishigaki;H. Umegami;W. Martínez;Masayoshi Yamamoto
中科院分区：
文献类型：
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作者：
H. Ishibashi;Akihiro Nishigaki;H. Umegami;W. Martínez;Masayoshi Yamamoto
在高效率和高温工业应用中，宽带隙半导体器件，如：氮化镓（GaN）和碳化硅（SiC），由于其出色的性能而受到极大的关注。然而，由于宽带隙器件具有低阈值电压，开关噪声会产生假导通现象。因此，使用这些器件的开关模式电源的效率可能降低。本文通过实验测试和电路仿真分析了该器件的栅噪声性能，重点研究了功率器件的寄生参数。此外，该分析是在理论计算的基础上使用等效电路建模进行的。结果表明，Si MOSFET和GaN HEMT具有不同的假导通机制。
In high efficiency and high temperature industrial applications, wide bandgap semiconductor devices, such as: Gallium Nitride (GaN) and Silicon Carbide (SiC), are getting great attention due to their outstanding performance. However, a false turn-on phenomenon can be produced by the switching noise because wide bandgap devices have low threshold voltage. Consequently, the efficiency of a switched-mode power supply using these devices can be decreased. This paper analyzes the gate noise performance using experimental tests and circuit simulations focusing on the parasitic parameters of the power devices. Additionally, this analysis was conducted on the base of the theoretical calculation using an equivalent circuit modeling. As a result, it was obtained that Si MOSFETs and GaN HEMT have different false turn-on mechanism.