Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
Type-II GaSb/GaAs coupled quantum rings: Room-temperature luminescence enhancement and recombination lifetime elongation for device applications
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II 型 GaSb/GaAs 耦合量子环：器件应用的室温发光增强和复合寿命延长
DOI：
10.1063/1.4737443
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发表时间：
2012
影响因子：
4
通讯作者：
Shih
中科院分区：
文献类型：
--
作者：
Wei;Kai;Shu‐Wei Chang;M. Shih;Shih
与常规量子环相比，Ⅱ型GaSb/GaAs量子环在室温下的发光增强了2个数量级，复合寿命延长了10倍。较长的寿命表明，大量的电子被限制在耦合环中，而不是简单地泄漏出去。这些现象表明，II型纳米结构可以潜在地用于室温发光和载流子存储应用。
Type-II GaSb/GaAs coupled quantum rings have exhibited two-order-of-magnitude luminescence enhancement and ten-times elongation of recombination lifetime at room temperature as compared with regular rings. The longer lifetime suggests that a significant amount of electrons are confined in coupled rings rather than simply leaking away. These phenomena indicate that type-II nanostructures can be potentially utilized for room-temperature luminescence and carrier storage applications.