Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces
Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces
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DOI：
10.1063/1.3326943
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发表时间：
2010-03
影响因子：
3.2
通讯作者：
J. Kasai;T. Hitosugi;M. Moriyama;K. Goshonoo;N. L. H. Hoang;S. Nakao;N. Yamada;T. Hasegawa
中科院分区：
文献类型：
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作者：
J. Kasai;T. Hitosugi;M. Moriyama;K. Goshonoo;N. L. H. Hoang;S. Nakao;N. Yamada;T. Hasegawa
采用溅射法在GaN（0001）表面制备了锐钛矿型Nb掺杂TiO 2透明导电氧化物。将在室温下沉积的非晶膜在真空中在500 °C的衬底温度下退火以形成单相非晶膜。厚度为170 nm的薄膜在460 nm波长处的电阻率为8×10−4 Ω cm，吸收率小于5%。此外，Nb掺杂的TiO 2的折射率与GaN的折射率匹配良好。这些发现表明，Nb掺杂的TiO 2是一种很有前途的材料，可用作GaN基发光二极管（LED）中的透明电极，特别是因为可以抑制电极/GaN边界处的反射，从而提高蓝色LED的外量子效率。
Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8×10−4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO2 was well matched to that of GaN. These findings indicate that Nb-doped TiO2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.