Comparative Analysis of Si- and GaN-Based Single-Phase Transformer-Less PV Grid-Tied Inverter
Comparative Analysis of Si- and GaN-Based Single-Phase Transformer-Less PV Grid-Tied Inverter
复制标题
DOI：
10.3390/electronics7030034
复制
发表时间：
2018-03
期刊：
影响因子：
2.9
通讯作者：
K. Alatawi;Fahad M. Almasoudi;Mahesh B. Manandhar;M. Matin
中科院分区：
文献类型：
--
作者：
K. Alatawi;Fahad M. Almasoudi;Mahesh B. Manandhar;M. Matin
近年来，光伏并网无变压器逆变器由于其比传统的线路Transformer逆变器具有更高的效率和更低的成本而受到越来越多的关注。本文提出了一种新的修改变压器的拓扑结构，来自H5逆变器，并提供了一个详细的比较使用GaN和Si器件的拓扑结构。详细的工作模式，逆变器的结构和开关策略的建议拓扑。数据表信息，传导损耗，开关损耗和散热器的要求进行了研究和分析，以提供一个准确的比较GaN和硅功率器件的建议拓扑工作在单位功率因数。结果表明，GaN功率器件显著降低了系统中的功率损耗，从而允许逆变器额定功率或开关频率的显著增加。因此，将GaN功率器件用于所提出的逆变器可以是更有吸引力和成本效益的方法。
Recently, the interest in grid-tied PV transformer-less inverters has increased rapidly, because of their higher efficiency and lower cost compared to traditional line transformer inverters. This paper presents a new modified transformer-less topology derived from H5 inverter, and provides a detailed comparison between the use of GaN and Si devices for the proposed topology. Detailed operation modes, inverter structure and switching strategy of the proposed topology are presented. Datasheet information, conduction losses, switching losses, and heat sink requirements are studied and analyzed to provide an accurate comparison between GaN and Si power devices for the proposed topology operating at unity power factor. The results show that, GaN power devices significantly reduce the power losses in the system, which consequently allow a significant increase in either inverter power rating or switching frequency. Thus, the use of GaN power devices for the proposed inverter can be more appealing and cost-effective approach.