Large-size free-standing single-crystal β-Ga 2 O 3 membranes fabricated by hydrogen implantation and lift-off
Large-size free-standing single-crystal β-Ga 2 O 3 membranes fabricated by hydrogen implantation and lift-off
复制标题
通过氢注入和剥离制备大尺寸自支撑单晶β-Ga 2 O 3 膜
DOI：
10.1039/d1tc00682g
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发表时间：
2021
影响因子：
6.4
通讯作者：
Seo, Jung-Hun
中科院分区：
文献类型：
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作者：
Zheng, Yixiong;Feng, Zixuan;Bhuiyan, A. F.;Meng, Lingyu;Dhole, Samyak;Jia, Quanxi;Zhao, Hongping;Seo, Jung-Hun
在本文中，我们展示了大尺寸的独立的单晶β-Ga2O3纳米材料的氢注入和剥离过程中直接从MOCVD生长的β-Ga2O3外延在自然衬底上。采用蒙特-卡罗模拟方法对最佳注入条件进行了模拟，以获得在所需深度处具有窄离子分布的高氢浓度。采用两种不同取向（[100]和[001]）的β-Ga2O3样品成功地制备了1.2 μ m厚的β-Ga2O3纳米材料，没有任何物理损伤。然后将这些β-Ga2O3纳米材料转印到刚性和柔性衬底上，例如SiC和聚酰亚胺衬底。进行了各种材料表征研究，以调查其晶体质量，表面形貌，光学性能，机械性能，和带隙之前和之后的剥离，并揭示了良好的材料质量保持。该结果提供了几个益处，因为可以完全控制β-Ga2O3 NM的厚度、掺杂和尺寸。此外，更先进的基于β-Ga2O3的纳米结构，如（AlxGa1 − x）2O3/Ga2O3异质结构纳米结构，可以直接从其体外延衬底中产生;因此，这项研究为实现高性能基于β-Ga2O3纳米结构的电子学和光电子学提供了一条可行的路线，可以构建在各种衬底和平台上。
In this paper, we demonstrated large-size free-standing single-crystal β-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown β-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation method to obtain a high hydrogen concentration with a narrow ion distribution at the desired depth. Two as grown β-Ga2O3 samples with different orientations ([100] and [001]) were used to successfully create 1.2 μm thick β-Ga2O3 NMs without any physical damage. These β-Ga2O3 NMs were then transfer-printed onto rigid and flexible substrates such as SiC and polyimide substrates. Various material characterization studies were performed to investigate their crystal quality, surface morphologies, optical properties, mechanical properties, and bandgaps before and after the lift-off and revealed that the good material quality was maintained. This result offers several benefits in that the thickness, doping, and size of β-Ga2O3 NMs can be fully controlled. Moreover, more advanced β-Ga2O3-based NM structures such as (AlxGa1−x)2O3/Ga2O3 heterostructure NMs can be directly created from their bulk epitaxy substrates; thus this study provides a viable route for the realization of high performance β-Ga2O3 NM-based electronics and optoelectronics that can be built on various substrates and platforms.