(Invited) A Path Toward Vertical GaN Superjunction Devices
(Invited) A Path Toward Vertical GaN Superjunction Devices
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（特邀）垂直GaN超结器件之路
DOI：
10.1149/09806.0069ecst
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Pavlidis, Spyridon
中科院分区：
文献类型：
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作者：
Khachariya, Dolar;Szymanski, Dennis;Reddy, Pramod;Kohn, Erhard;Sitar, Zlatko;Collazo, Ramon;Pavlidis, Spyridon
GaN器件为现有技术提供了令人兴奋的竞争，以满足对高功率电子器件日益增长的需求。GaN的宽带隙使得在单极器件中与传统Si相比可以实现更高的击穿电压和降低的导通电阻，正如经典的Baliga品质因数（BFOM）所预测的那样。然而，单极性能限制可以使用超结（SJ）来规避，这已经在Si和SiC中实验证明。由于目前GaN中选择性区域掺杂的困难，缺乏垂直GaN SJS的实验报告。作为回应，我们提出使用横向极性结（LPJ），这是独特的III族氮化物，创造下一代垂直GaN SJ器件。我们开发了一个模型，提供了这样的设备的一阶设计方程，并验证它使用TCAD模拟的1.2 kV二极管。提出了一种基于LPJ的GaN SJ的制造方法。
GaN devices offer exciting competition to incumbent technologies to meet the growing demand for high power electronic devices. The wide bandgap of GaN makes it possible to achieve higher breakdown voltages and reduced on-resistances compared to traditional Si in unipolar devices, as predicted by the classical Baliga figure of merit (BFOM). However, unipolar performance limits can be circumvented using the superjunction (SJ), which has been demonstrated experimentally in both Si and SiC. Due to the current difficulties with selective area doping in GaN, experimental reports of vertical GaN SJs are lacking. In response, we propose the use of the lateral polar junction (LPJ), which is unique to III-Nitrides, to create next-generation vertical GaN SJ devices. We develop a model that provides first order design equations for such a device, and validate it using TCAD simulations of a 1.2 kV diode. A proposed manufacturing approach for LPJ-based GaN SJ is provided.