Sensing the electrical activity of single ion channels with top-down silicon nanoribbons.

Sensing the electrical activity of single ion channels with top-down silicon nanoribbons.
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使用自上而下的硅纳米带感测单离子通道的电活动。

DOI:
10.1088/2399-1984/aac737
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发表时间:
2018
期刊:
影响因子:
2.1
通讯作者:
Burke,PeterJ
Burke,PeterJ
中科院分区:
材料科学3区
文献类型:
--
作者:
Zhou,Weiwei;Mu,Luye;Li,Jinfeng;Reed,Mark;Burke,PeterJ

文献摘要

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利用自顶向下制备的硅纳米带,测量了离子通道阿米西星和甘草苷A的开通和闭合,建立了系统的电容模型,证明了纳米带的几何电容是由离子通道电流充电的。自上而下的纳米带与电生理学的集成为电活动的生命系统与人工电子的集成带来了希望。
Using top-down fabricated silicon nanoribbons, we measure the opening and closing of ion channels alamethicin and gramicidin A. A capacitive model of the system is proposed to demonstrate that the geometric capacitance of the nanoribbon is charged by ion channel currents. The integration of top-down nanoribbons with electrophysiology holds promise for integration of electrically active living systems with artificial electronics.