Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography
Threading Screw Dislocations in 4H-SiC Wafer Observed
by the Weak-Beam Method in Bragg-Case X-ray Topography
复制标题
布拉格案例X射线形貌弱束法观察4H-SiC晶片中的螺纹螺位错
DOI：
10.1007/s11664-010-1158-8
复制
发表时间：
2010
影响因子：
2.1
通讯作者：
H. Matsuhata
中科院分区：
文献类型：
--
作者：
H. Yamaguchi;H. Matsuhata
利用弱光束技术在布拉格情形（反射）几何中观察了4H-SiC中的位错。用角散度为0.87 μrad的x射线束，用不对称Si 331反射准直，得到了SiC 0008反射的近似本征摇摆曲线。在偏离摇摆曲线峰24 μrad的衍射条件下，用运动学衍射法观察了螺杆位错的高分辨率对比。将晶圆片内部的螺纹螺纹错位投影到地形图上。此外，考虑到位错周围的晶格位移，直接从弱光束图像确定了每个螺位错的意义。
Dislocations in 4H-SiC have been observed by x-ray topography in the Bragg-case (reflection) geometry by means of a weak-beam technique. Using an x-ray beam with an angular divergence of 0.87 μrad, collimated by an asymmetric Si 331 reflection, a nearly intrinsic rocking curve of the SiC 0008 reflection was obtained. High-resolution contrast of threading screw dislocations by kinematical diffraction was observed under diffraction conditions that deviated from the rocking curve peak by 24 μrad. Threading screw dislocations running inside the wafer were projected onto the topograph. In addition, the sense of each screw dislocation was determined directly from the weak-beam image in consideration of lattice displacement around the dislocation.
透射电子显微镜
DOI：
10.1007/978-3-319-26651-0_3
发表时间：
2016
期刊：
--
影响因子：
--
作者：
Burke M
通讯作者：
Burke M