Numerical simulation of transport properties in InAs/Si heterojunction nanowire tunneling field effect transistors
Numerical simulation of transport properties in InAs/Si heterojunction nanowire tunneling field effect transistors
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InAs/Si异质结纳米线隧道场效应晶体管输运特性的数值模拟
DOI：
10.1109/imfedk.2012.6218605
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
H. Nakamura
中科院分区：
文献类型：
--
作者：
Y. Miyoshi;M. Ogawa;S. Souma;H. Nakamura
采用基于sp3s*d5紧密结合哈密顿量的非平衡格林函数形式，对InAs/Si异质结纳米线（NW）带对带隧道场效应晶体管（tfet）中的电子输运进行了数值研究。我们的分析表明，与基于Si和InAs异质结NW的tfet相比，基于Si和InAs异质结NW的tfet具有更高的导通电流，更低的漏电流以及更陡的亚阈值摆幅。这种优势背后的物理根源可以通过分析复杂的能带结构和态的局部密度来成功地理解。
Electronic transport in InAs/Si heterojunction nanowire (NW) band-to-band tunneling field-effect transistors (TFETs) is studied numerically using the non-equilibrium Green's function formalism based on the sp3s*d5tight-binding Hamiltonian. Our analyses have shown that TFETs based on the InAs/Si heterojunction NW have superior properties compared with those based on the Si and InAs homojunction NWs in obtaining the higher on-current, lower leakage current as well as the steeper subthreshold swing. The physical origin behind such superiority can be successfully understood by analyzing the complex band structures and the local densities of states.