All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
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通过金属有机化学气相沉积生长的全单片 1.55 µm InAlGaAs/InP 垂直腔表面发射激光器
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
B. Yoo
中科院分区：
文献类型：
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作者：
Mi;O. Kwon;W. Han;Ki;Seong;B. Yoo
我们成功展示了通过金属有机化学气相沉积 (MOCVD) 在 1.55 µm 波长范围内生长的全单片 InAlGaAs/InP 垂直腔表面发射激光器 (VCSEL)。该器件表现出单模输出功率1.6 mW、边模抑制比(SMSR) 60 dB、发散角8°、斜率效率0.27 W/A、连续波(CW)工作温度超过80°C等高性能。我们实现了超过 2.5 Gbps 的调制带宽和超过 30 公里的无功率损失传输。
We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 µm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8°, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30 km.