Generic model for current collapse in spin-blockaded transport
Generic model for current collapse in spin-blockaded transport
复制标题
DOI：
10.1103/physrevb.76.035432
复制
发表时间：
2007-07-01
影响因子：
3.7
通讯作者：
Datta, Supriyo
中科院分区：
文献类型：
--
作者：
Muralidharan, Bhaskaran;Datta, Supriyo
随着电压的增加，电流减小，通常被称为负微分电阻（NDR），已经在许多电子器件中观察到，并且通常可以在单电子图像中理解。然而，NDR最近被报道在纳米器件与大的单电子充电能量，需要在福克空间的多电子图片。本文提出了一种通用的模型，在这种运输制度导致一个简单的标准，观察NDR所需的条件，并表明，该模型描述了最近观察到的多个NDR的自旋阻塞运输通过弱耦合双量子点相当不错。这个模型清楚地显示了轨道能量偏移、离域和库仑相互作用的微妙相互作用如何在正确的条件下导致观察到的NDR，并且还有助于获得与实验观察到的特征的良好匹配。我们认为，基本模型可能是有用的，在理解其他实验在这种传输制度以及。
A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently been reported in nanoscale devices with large single-electron charging energies which require a many-electron picture in Fock space. This paper presents a generic model in this transport regime leading to a simple criterion for the conditions required to observe NDR and shows that this model describes the recent observation of multiple NDR's in spin-blockaded transport through weakly coupled-double quantum dots quite well. This model clearly shows how a delicate interplay of orbital energy offset, delocalization, and Coulomb interaction leads to the observed NDR under the right conditions, and also aids in obtaining a good match with experimentally observed features. We believe that the basic model could be useful in understanding other experiments in this transport regime as well.