Epitaxial Growth of Full-Heusler Alloy Co$_2$MnSi Thin Films on MgO-Buffered MgO Substrates
Epitaxial Growth of Full-Heusler Alloy Co$_2$MnSi Thin Films on MgO-Buffered MgO Substrates
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DOI：
10.1109/tmag.2006.878850
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发表时间：
2006-05
影响因子：
2.1
通讯作者：
H. Kijima;T. Ishikawa;T. Marukame;H. Koyama;K. Matsuda;T. Uemura;M. Yamamoto
中科院分区：
文献类型：
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作者：
H. Kijima;T. Ishikawa;T. Marukame;H. Koyama;K. Matsuda;T. Uemura;M. Yamamoto
采用磁控溅射法在MgO缓冲衬底上外延生长了全Heusler合金Co2 MnSi（CMS）薄膜。薄膜在室温下沉积，随后在600 ℃下原位退火。X-射线极图测量的退火膜显示111峰与四重对称，提供直接证据表明，这些薄膜是外延和结晶的L21结构。退火膜具有足够平坦的表面形貌，在50 nm的膜厚度下具有约0.22 nm的均方根粗糙度。退火后薄膜的饱和磁化强度为4.5 μ B/f. u。在10 K下，对应于CMS的Slater-Pauling值的约90
Full-Heusler alloy Co2MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at 600degC. X-ray pole figure measurements of the annealed films showed 111 peaks with fourfold symmetry, providing direct evidence that these films were epitaxial and crystallized in the L21 structure. The annealed films had sufficiently flat surface morphologies with root-mean-square roughness of about 0.22 nm at a film thickness of 50 nm. The saturation magnetization of the annealed films was 4.5muB/f.u. at 10 K, corresponding to about 90% of the Slater-Pauling value for CMS