Spin transport properties in silicon in a nonlocal geometry
Spin transport properties in silicon in a nonlocal geometry
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非局域几何中硅的自旋输运特性
DOI：
10.1103/physrevb.83.241204
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发表时间：
2011
影响因子：
3.7
通讯作者：
Toshio Suzuki
中科院分区：
文献类型：
--
作者：
M. Shiraishi;Yoshiya Honda;E. Shikoh;Yoshishige Suzuki;T. Shinjo;T. Sasaki;T. Oikawa;K. Noguchi;Toshio Suzuki
用非局域几何方法系统地研究了8K下硅中的自旋输运性质。发现非局域方案中的自旋注入信号与偏置电流的演化成比例地增加。用Hanle型自旋进动信号进行的理论拟合表明，与其他自旋装置中的情况相比，偏置电流的变化对硅中传输的自旋极化的影响要小得多。自旋累积电压的偏置电流依赖关系与自旋极化的偏置电流依赖关系也表现出很好的一致性。
A systematic investigation of spin transport properties in silicon at 8 K by using a nonlocal geometry is presented. The spin injection signal in the nonlocal scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spins in the Si is much less affected by the change in the bias electric current compared with the cases in the other spin devices. It is also revealed that the bias current dependence of the spin accumulation voltages exhibits good accordance with that of the spin polarization.