Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage
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DOI：
10.1063/1.3492836
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发表时间：
2010-09-20
影响因子：
4
通讯作者：
Jagadish, Chennupati
中科院分区：
文献类型：
--
作者：
Jolley, Greg;Lu, Hao Feng;Jagadish, Chennupati
我们报告了 In0.5Ga0.5As/GaAs 量子点太阳能电池的温度依赖性电特性的详细分析。研究发现，导致开路电压降低的效应是载流子从 n 型层和 p 型层热注入耗尽区，在耗尽区中，由于热分布，载流子与占据量子点态的载流子重新结合。讨论了这里研究的器件与理想中带太阳能电池的差异。 (C) 2010 年美国物理研究所。 [号码：10.1063/1.3492836]
We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3492836]