Selective oxidation of AlInN layers for current confinement in III–nitride devices
Selective oxidation of AlInN layers for current confinement in III–nitride devices
复制标题
用于 III 族氮化物器件电流限制的 AlInN 层的选择性氧化
DOI：
10.1063/1.2012533
复制
发表时间：
2005
影响因子：
4
通讯作者：
M. Ilegems
中科院分区：
文献类型：
--
作者：
J. Dorsaz;H. Bühlmann;J. Carlin;N. Grandjean;M. Ilegems
展示了对掩埋在氮化镓（GaN）基质中的氮化铝铟（AlInN）中间层进行的高选择性氧化。该技术已成功应用于在III族氮化物发光二极管（LED）中形成电流孔径。通过金属有机气相外延生长氮化镓LED，在器件的n型掺杂区域插入晶格匹配的氮化铝铟层。采用Cl₂/Ar反应离子刻蚀对台面进行刻蚀，以暴露氮化铝铟的侧壁。然后将样品在次氮基三乙酸溶液中进行阳极氧化。利用该技术，氮化铝铟层横向氧化深度可达22μm，而周围的氮化镓层不受影响。随后证明，氧化后的氮化铝铟层是绝缘的，因此适用于光电器件中的横向电流限制。
Highly selective oxidation of an AlInN interlayer buried in a GaN matrix is demonstrated. This technique was successfully applied to form current apertures in III-nitride light-emitting diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitaxy with a lattice-matched AlInN layer inserted in the n-doped region of the device. Mesas were etched by Cl2∕Ar reactive ion etching to give access to the AlInN sidewalls. The sample was then oxidized anodically in a nitrilotriacetic acid solution. Using this technique, the AlInN layer was oxidized laterally up to 22μm deep while the surrounding GaN layers were kept unaffected. It was subsequently demonstrated that the oxidized AlInN layers are insulating and are therefore suitable for lateral current confinement in optoelectronic devices.