Li- and Mg-doping into Icosahedral Boron Crystals, α- and β- Rhombohedral Boron, Targeting High-Temperature Superconductivity: Structure and Electronic States
Li- and Mg-doping into Icosahedral Boron Crystals, α- and β- Rhombohedral Boron, Targeting High-Temperature Superconductivity: Structure and Electronic States
复制标题
DOI:
10.1016/j.jssc.2003.03.002
复制
发表时间:
2004-02
影响因子:
3.3
通讯作者:
K. Soga;Atsushi Oguri;S. Araake;M. Terauchi;A. Fujiwara;K. Kimura
中科院分区:
文献类型:
--
作者:
K. Soga;Atsushi Oguri;S. Araake;M. Terauchi;A. Fujiwara;K. Kimura
The possibility of high TCsuperconductivity is suggested for lithium- and magnesium-doped icosahedral boron crystals, α- and β-rhombohedral boron. The doping of these elements was attempted by a vapor diffusion processing. Both lithium and magnesium are hardly doped into the α-rhombohedral boron, although small amounts of metallic parts are found in the sample. In only one Li-doped sample, the metallic part contained 0.02vol% of the superconductive phase (TC∼36K). Magnesium was successfully doped into β-rhombohedral boron homogeneously up to 4at% (Mg4.1B105), although considerable amount of impurity silicon was introduced together with magnesium. The structures of the doped samples were analyzed assuming co-doping of magnesium and silicon. The relation between the site occupancies of the dopants and the lattice expansion is discussed. The estimation of the density of states near the Fermi energy by EELS and magnetic susceptibility measurements suggested a metal transition of the β-rhombohedral boron by the doping of magnesium and silicon. The relation between the metal transition and the intrinsic acceptor level is also discussed.