240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy
240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy
复制标题
采用分子层外延技术制造的 240-325-GHz GaAs CW 基模 TUNNETT 二极管
DOI：
10.1109/ted.2003.812103
复制
发表时间：
2003
影响因子：
3.1
通讯作者：
H. Makabe
中科院分区：
文献类型：
--
作者：
P. Płotka;J. Nishizawa;T. Kurabayashi;H. Makabe
采用分子层外延（MLE）技术制备了渡越时间层厚度为100和150 nm的砷化镓（GaAs）隧穿电子注入（TUNNETT）渡越时间二极管。在0.86 /spl次/ 0.43 mm尺寸的金属矩形谐振腔（WR-3）中获得了频率范围为240 ~ 325 GHz的连续波基模振荡。在322 GHz处产生-13 dBm的输出功率。基模操作以及不同阻抗匹配配置的实验表明，有可能开发频率范围为350 GHz至1 THz的基模TUNNETT发生器。TUNNETT的运行确认了MLE的器械质量。
Gallium arsenide (GaAs) transit-time diodes with tunnel injection of electrons (TUNNETT) with transit-time layer thickness of 100 and 150 nm were fabricated with molecular layer epitaxy (MLE). Continuous-wave fundamental-mode oscillation in the frequency range of 240 to 325 GHz in metal rectangular resonant 0.86 /spl times/ 0.43 mm size (WR-3) cavities was obtained. Output power of -13 dBm was generated at 322 GHz. The fundamental mode operation, as well as experiments on different impedance matching configurations, suggest that it is possible to develop fundamental mode TUNNETT generators for the frequency range of 350 GHz to 1 THz. Operation of the TUNNETTs confirms device quality of the MLE.