Activation of C−F Bonds by Electrophilic Organosilicon Sites Supported on Sulfated Zirconia
Activation of C−F Bonds by Electrophilic Organosilicon Sites Supported on Sulfated Zirconia
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硫酸化氧化锆负载的亲电有机硅位点活化 C–F 键
DOI：
10.1002/ange.201809199
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发表时间：
2018
影响因子：
--
通讯作者：
Conley, Matthew P.
中科院分区：
文献类型：
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作者：
Culver, Damien B.;Conley, Matthew P.
烯丙基三异丙基硅烷与部分脱羟基的硫酸化氧化锆(SZO)反应生成表面有机硅物种。有机硅官能化SZO的固体核磁共振研究表明，除了活性较低的TIPS-Ox和SiOx种外，表面还存在亲电的[TIPS][SZO]位。[TIPS][SZO][SZO]位是三乙基氧膦(O= )接触材料的31P固体核磁共振分析得到的强路易斯酸。[TIPS][SZO]在Et3SiH存在下的加氢脱氟反应中是活跃的。
The reaction of allyltriisopropylsilane with partially dehydroxylated sulfated zirconium oxide (SZO) forms surface organosilicon species. Solid‐state NMR studies of the organosilicon functionalizedSZOshows that electrophilic [TIPS][SZO] sites are present on the surface, in addition to less reactive TIPS‐Oxand SiOxspecies. The electrophilic [TIPS][SZO] sites are strong Lewis acids from solid‐state31P NMR analysis of triethylphosphine oxide (O=PEt3) contacted materials. [TIPS][SZO] is active in hydrodefluorination reactions in the presence of Et3SiH.