The missing memristor found
The missing memristor found
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DOI：
10.1038/nature06932
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发表时间：
2008-05-01
期刊：
影响因子：
64.8
通讯作者：
Williams, R. Stanley
中科院分区：
文献类型：
--
作者：
Strukov, Dmitri B.;Snider, Gregory S.;Williams, R. Stanley
任何上过电子实验室课程的人都会熟悉基本的无源电路元件：电阻器、电容器和电感器。然而，1971年，蔡少棠（Leon Chua）通过对称性论证推断应该存在第四种基本元件，他将其称为忆阻器（记忆电阻的简称）(1)。尽管他表明这种元件具有许多有趣且有价值的电路特性，但直到现在，还没有人提出一个有用的物理模型或忆阻器的实例。在此，我们通过一个简单的分析实例表明，在外部偏置电压下固态电子和离子输运相耦合的纳米级系统中，忆阻自然产生。这些结果为理解在许多涉及带电原子或分子物种运动的纳米级电子器件（2 - 19）中观察到的广泛的滞后电流 - 电压行为奠定了基础，特别是某些二氧化钛交叉点开关（20 - 22）。
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor ( short for memory resistor)(1). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid- state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current - voltage behaviour observed in many nanoscale electronic devices(2-19) that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross- point switches(20-22).