Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals
Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals
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DOI：
10.1002/pssr.201600376
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发表时间：
2017-01
期刊：
影响因子：
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通讯作者：
K. Nomoto;D. Hiller;S. Gutsch;A. Ceguerra;A. Breen;M. Zacharias;G. Conibeer;I. Perez-Wurfl;S. Ringer
中科院分区：
文献类型：
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作者：
K. Nomoto;D. Hiller;S. Gutsch;A. Ceguerra;A. Breen;M. Zacharias;G. Conibeer;I. Perez-Wurfl;S. Ringer
硅纳米晶体的掺杂对于控制其电子和光学性质是必不可少的。由于自净化效应，将杂质掺入硅纳米体积中是一项不平凡的任务。在这里，系统的原子探针断层扫描研究的磷分布和纳入尺寸控制的硅纳米晶体嵌入二氧化硅。定性地，事实证明，系统中的磷分布遵循普遍的、与尺寸无关的趋势：在界面处磷富集，在直径小至2 nm的硅微球中大量磷掺入。这显然与严格的自我净化相矛盾。这些观察结果解释的体积溶解度和偏析行为，动力学效应相关的扩散长度，和纳米级界面应变。每个量子点的磷原子量的定量测定使得能够系统地理解磷对硅纳米体积的光学和电子性质的影响。
Doping of silicon nanocrystals is essential to control their electronic and optical properties. The incorporation of an impurity into a silicon nanovolume is a nontrivial task due to the self‐purification effect. Here, a systematic atom probe tomography study of the phosphorus distribution and incorporation in size‐controlled silicon nanocrystals embedded in silicon dioxide is presented. Qualitatively, it turns out that the phosphorus distribution in the system follows a universal, nanocrystal‐size independent trend: phosphorus‐enrichment at the interface with a substantial phosphorus‐incorporation in the silicon nanocrystal as small as 2 nm in diameter. This clearly contradicts strict self‐purification. These observations are explained by the bulk‐solubility and ‐segregation behaviour, kinetic effects related to the diffusion lengths, and nanoscale interface strain. The quantitative determination of the amount of phosphorus atoms per quantum dot enables a systematic understanding of phosphorus‐induced effects on optical and electronic properties of silicon nanovolumes.