Behavior of hydrogen isotope retention in carbon implanted tungsten
Behavior of hydrogen isotope retention in carbon implanted tungsten
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DOI：
10.1016/j.jnucmat.2009.01.175
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发表时间：
2009-06
影响因子：
3.1
通讯作者：
Y. Oya;Y. Inagaki;Sachiko Suzuki;H. Ishikawa;Y. Kikuchi;A. Yoshikawa;H. Iwakiri;N. Ashikawa
中科院分区：
文献类型：
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作者：
Y. Oya;Y. Inagaki;Sachiko Suzuki;H. Ishikawa;Y. Kikuchi;A. Yoshikawa;H. Iwakiri;N. Ashikawa
为了阐明C+注入对钨中氘潴留的影响，在钨上同时进行了C+和D2+注入。比较了同步注入钨和顺序注入钨的氘脱附行为。结果表明，碳溅射和碳捕获的氘可以防止氘捕获，同时发生的氘保留率低于连续发生的氘保留率。此外，随着C+/D+比值的增加，氘潴留量降低，高C+/D+比值时，碳没有捕获氘。这些事实表明，同时离子注入在钨中产生的陷阱数量是控制钨中氘保留的主要因素。然而，对于低C+/D+比，碳捕获氘将是主要的捕获状态之一。
To elucidate the C+implantation effect on deuterium retention in tungsten, simultaneous C+and D2+implantation was performed on tungsten. Deuterium desorption behavior for simultaneously implanted tungsten was compared with that the sequentially implanted tungsten. It was found that deuterium retention for the simultaneous case was lower than that for the sequential one, indicating that the sputtering of carbon and deuterium trapped by carbon would prevent the deuterium trapping. In addition, deuterium retention decreased with increasing C+/D+ratio and deuterium trapping by carbon was not observed for high C+/D+ratio. These facts indicate that the number of available traps in tungsten produced by simultaneous ion implantation would mainly control the deuterium retention in tungsten. However, for low C+/D+ratios, deuterium trapping by carbon would be one of major trapping states.