Grain boundary transport in x-ray irradiated polycrystalline diamond
Grain boundary transport in x-ray irradiated polycrystalline diamond
复制标题
X 射线照射多晶金刚石中的晶界输运
DOI：
10.1063/1.1565191
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发表时间：
2003
影响因子：
3.2
通讯作者：
D. M. Trucchi
中科院分区：
文献类型：
--
作者：
G. Conte;M. Rossi;S. Salvatori;F. Fabbri;S. Loreti;P. Ascarelli;E. Cappelli;D. M. Trucchi
一个“薄”的多晶金刚石膜的输运性质进行了分析后，样品暴露于8.06 keV的X射线辐射。通过拉曼、X射线衍射和扫描电子显微镜技术对所生长的薄膜的结构和形貌进行了评价。在60 ~ 360 K温度范围内，通过测量暗电流-电压特性研究了其输运性质。欧姆输运已被证明在生长的薄膜上高达1.16×105 V/cm。照射后，暗电流的非线性贡献已被证明和相关的场辅助热电离的陷阱。在200 K以下，观察到了跳跃机制。相关性已被发现之间的X射线照射，密度的陷阱参与运输过程中，和样品的非均匀性。提出了一个简单的晶界结构模型来解释观测结果。
The transport properties of a “thin” polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grown film have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark current–voltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grown film up to 1.16×105 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is proposed to explain the observations.