FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si
FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si
复制标题
DOI：
10.1017/s1431927615015615
复制
发表时间：
2016-02-01
影响因子：
2.8
通讯作者：
Volz, Kerstin
中科院分区：
文献类型：
--
作者：
Gries, Katharina I.;Werner, Katharina;Volz, Kerstin
熔回蚀刻是在硅上生长的含镓（Ga）的III/V半导体可能发生的一种效应。由于这种效应影响两种化合物之间的界面，从而影响材料组合物的物理特性，因此了解其驱动力是可取的。因此，我们研究了以三甲基Ga为前驱体，通过金属有机化学气相沉积在Si（001）上生长Ga。由于反熔刻蚀，在硅表面形成含ga的液滴，并进入硅片。通过平面观察和扫描透射电子显微镜的横断层析分析了这些结构的形状。在平面视图制备中，使用了聚焦离子束，以避免损坏对常规平面视图制备中通常使用的化学物质敏感的含ga结构。结合两种研究方法的结果，证实了Si中的含ga结构呈现出沿Si{111}晶格面的棱锥形状。
Melt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.