Effects of InGaN quantum disk thickness on the optical properties of GaN nanowires
Effects of InGaN quantum disk thickness on the optical properties of GaN nanowires
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DOI：
10.1016/j.jcrysgro.2022.126654
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发表时间：
2022-04-04
影响因子：
1.8
通讯作者：
Arafin, Shamsul
中科院分区：
文献类型：
--
作者：
Hasan, Syed M. N.;Ghosh, Arnob;Arafin, Shamsul
实验研究了InGaN量子盘（Qdisk）厚度对轴向InGaN/GaN纳米线发光特性的影响。采用光致发光和阴极发光光谱相结合的方法对等离子体辅助分子束外延生长的InGaN/GaN纳米线异质结构的发光特性进行了测量。在4-12 nm范围内，系统地分析了Qdisk厚度变化对发射峰波长、谱线形状、谱线宽度和最大强度的影响。来自平均InGaN Qdisk相关发射的光谱测量揭示了内置压电应变的存在，如由随着泵浦信号增加的发光蓝移所证明的。为了确定材料成分及其在GaN势垒分隔的堆叠InGaN Qdisk上的空间均匀性，还进行了具有能量色散X射线光谱的透射电子显微镜。这为GaN纳米线内InGaN Qdisk的结构特性提供了进一步的见解。因此，我们的实验研究有助于推进理解，在一般情况下，III-氮化物纳米结构的经典和非经典的光电器件的实施。
The impact of InGaN quantum disk (Qdisk) thickness on the optical emission properties of axial InGaN/GaN nanowires is experimentally studied. The luminescence of InGaN/GaN nanowire heterostructures grown by plasma assisted molecular beam epitaxy were measured using a combination of photoluminescence and cath-odoluminescence spectroscopy. The variation of peak emission wavelength, spectral lineshape, width, and maximum intensity with the change of Qdisk thickness over the range of 4-12 nm was systematically analyzed. Both the spectroscopic measurements from the average InGaN Qdisk-related emissions reveal the presence of built-in piezoelectric strain as evidenced by the luminescence blueshift with increasing pump signal. To deter-mine the material compositions and their spatial uniformity across the stacked InGaN Qdisks separated by GaN barriers, transmission electron microscopy with energy-dispersive x-ray spectroscopy were also performed. This provides further insights into the structural properties of the InGaN Qdisks within GaN nanowires. Thus, our experimental study serves to advance the understanding of, in general, III-nitride nanostructures for the implementation of classical and non-classical optoelectronic devices.