Low frequency noise analysis and resistance relaxation in Au/SrTiO3/Au for bipolar resistive switching
Low frequency noise analysis and resistance relaxation in Au/SrTiO3/Au for bipolar resistive switching
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双极电阻开关中 Au/SrTiO3/Au 的低频噪声分析和电阻弛豫
DOI：
10.7498/aps.62.197201
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发表时间：
2013
影响因子：
1
通讯作者：
Zhao Hong-Wu
中科院分区：
文献类型：
--
作者：
Zhang Pei-Jian;Meng Yang;Li Dong;Zhao Hong-Wu
采用低频分析方法研究了Au/SrTiO3/Au双极电阻开关夹层中的电阻弛豫现象。在高阻状态和低阻状态下，导电电流波动的功率谱密度表现为1/f行为。通过对比实验，高阻态的低频噪声归因于反向偏压下的肖特基势垒和氧空位扩散，而低阻态的噪声是由氧空位迁移引起的载流子波动引起的。电阻弛豫可以进一步理解为电场作用下氧空位的扩散。
The resistance relaxation in Au/SrTiO3/Au sandwiches with bipolar resistance switching has been investigated by the low frequency analysis. The power spectral density of the conducting current fluctuation in the high resistance state and the low resistance state shows 1/f behaviors. By contrast experiment, the low frequency noise for the high resistance state is ascribed to the Schottky barrier under reverse bias and the oxygen vacancy diffusion, while the noise in the low resistance state is due to the carriers fluctuation arising from the oxygen vacancy migration. The resistance relaxation can be further understood as the diffusion of oxygen vacancies under an electric field.