Microstructure evolution of T91 irradiated in the BOR60 fast reactor
Microstructure evolution of T91 irradiated in the BOR60 fast reactor
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DOI：
10.1016/j.jnucmat.2018.03.024
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发表时间：
2018-06-01
影响因子：
3.1
通讯作者：
Was, G. S.
中科院分区：
文献类型：
--
作者：
Jiao, Z.;Taller, S.;Was, G. S.
使用透射电子显微镜 (TEM)、扫描透射电子显微镜 (STEM) 和原子探针断层扫描 (APT) 对 BOR60 反应堆中在 376 ℃ 至 524 ℃ 之间的五个温度、15.4 至 35.1 dpa 剂量下辐照的 T91 中子的微观结构进行了表征。在376-415℃时观察到a型<100>位错环，在460℃和524℃时以网状位错为主。在376℃和415℃之间的照射温度下，空洞呈双峰分布，具有高密度的小于2nm的小气泡。在460℃和524℃下也观察到小气泡，但不存在大于2nm的空洞。在所有辐照温度下均观察到 Cr、Ni 和 Si 在晶界富集。 Cr、Ni 和 Si 的辐射诱导偏析 (RIS) 在 17.1 dpa 和 376 ℃ 时出现饱和。Cr、Ni 和 Si 在晶界处的 RIS 的温度依赖性（显示 Cr 富集峰值温度为 460 ℃，Ni 和 Si 富集峰值温度较低，接近 400 ℃）与质子辐照 T91 中 Cr RIS 的观察结果一致，表明相同的 RIS 机制也可适用于BOR60辐照的T91。在 376-415 摄氏度时观察到 G 相和富铜沉淀物，但在 460 摄氏度和 524 摄氏度时不存在。524 摄氏度时不存在 G 相可能与该条件下 Ni 和 Si 的最小偏析有关。 (C) 2018 Elsevier B.V. 保留所有权利。
Microstructures of T91 neutron irradiated in the BOR60 reactor at five temperatures between 376 degrees C and 524 degrees C to doses between 15.4 and 35.1 dpa were characterized using transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), and atom probe tomography (APT). Type a < 100 > dislocation loops were observed at 376-415 degrees C and network dislocations dominated at 460 degrees C and 524 degrees C. Cavities appeared in a bimodal distribution with a high density of small bubbles less than 2 nm at irradiation temperatures between 376 degrees C and 415 degrees C. Small bubbles were also observed at 460 degrees C and 524 degrees C but cavities greater than 2 nm were absent. Enrichment of Cr, Ni, and Si at the grain boundary was observed at all irradiation temperatures. Radiation-induced segregation (RIS) of Cr, Ni and Si appeared to saturate at 17.1 dpa and 376 degrees C. The temperature dependence of RIS of Cr, Ni and Si at the grain boundary, which showed a peak Cr enrichment temperature of 460 degrees C and a lower peak Ni and Si enrichment temperature of similar to 400 degrees C, was consistent with observations of RIS of Cr in proton irradiated T91, suggesting that the same RIS mechanism may also apply to BOR60 irradiated T91. G-phase and Cu-rich precipitates were observed at 376-415 degrees C but were absent at 460 degrees C and 524 degrees C. The absence of G-phase at 524 degrees C could be related to the minimal segregation of Ni and Si in that condition. (C) 2018 Elsevier B.V. All rights reserved.