CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics
CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics
复制标题
FZ 高电阻率衬底上的 CMOS，用于 SiGe-RF 电路和读出电子器件的单片集成
DOI：
10.1109/16.595936
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发表时间：
1997
影响因子：
3.1
通讯作者：
E. Kasper
中科院分区：
文献类型：
--
作者：
D. Beck;M. Herrmann;E. Kasper
硅毫米波集成电路（SIMMWIC）的高阻衬底的选择所施加的低RF衬底损耗的要求，需要在浮区硅（FZ）的CMOS工艺的适应。给出了在高电阻率衬底（p型，5000 /spl Ω//spl middot/cm）和标准CMOS衬底（CZ，n型，4-6 /spl Ω//spl middot/cm）上实现的n沟道和p沟道器件的比较。使用精心的工艺设计，我们获得了与标准材料非常相似的FZ衬底上的器件特性，从而允许直接转移现有的电路设计。
The choice of a highly resistive substrate for silicon millimeter-wave integrated circuits (SIMMWIC) imposed by the requirement of low RF-substrate losses requires the adaptation of a CMOS process on float zone silicon (FZ). A comparison of n- and p-channel devices realized on high resistivity substrate (p-type, 5000 /spl Omega//spl middot/cm) and standard CMOS substrates (CZ, n-type, 4-6 /spl Omega//spl middot/cm) is given. Using careful process design, we obtained device characteristics on FZ-substrates that are closely similar to those on standard material, thus allowing direct transfer of existing circuit designs.