Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates
Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates
复制标题
通过压电基板上金属电极中可逆纳米裂纹的形成实现具有巨大开/关电流比的石墨烯应变效应晶体管
DOI：
10.1021/acs.nanolett.2c04519
复制
发表时间：
2023
期刊：
影响因子：
10.8
通讯作者：
Das, Saptarshi
中科院分区：
文献类型：
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作者：
Zheng, Yikai;Sen, Dipanjan;Das, Sarbashis;Das, Saptarshi
石墨烯中极高的载流子迁移率导致了许多物理学上的重大发现，同时也引起了人们对基于石墨烯的电子设备和传感器的极大兴趣。然而，在石墨烯场效应晶体管中观察到的较差的开/关电流比阻碍了其在许多应用中的应用。在这里，我们引入了一种石墨烯应变效应晶体管（GSET），其ON/OFF电流比超过107，通过利用压电栅堆在源极/漏极金属触点上形成应变诱导的可逆纳米裂纹。gset还表现出陡峭的开关，在有限迟滞窗口中，电子和空穴分支的源极到漏极电流的亚阈值摆幅（SS）小于1 mV/ 10年，平均变化超过6个数量级。我们还展示了GSETs的高器件屈服率和应变耐久性。我们相信GSETs可以大大扩展基于石墨烯的技术的应用空间，超出目前的设想。
Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in physics and at the same time invoked great interest in graphene-based electronic devices and sensors. However, the poor ON/OFF current ratio observed in graphene field-effect transistors has stymied its use in many applications. Here, we introduce a graphene strain-effect transistor (GSET) with a colossal ON/OFF current ratio in excess of 107by exploiting strain-induced reversible nanocrack formation in the source/drain metal contacts with the help of a piezoelectric gate stack. GSETs also exhibit steep switching with a subthreshold swing (SS) < 1 mV/decade averaged over ∼6 orders of magnitude change in the source-to-drain current for both electron and hole branch amidst a finite hysteresis window. We also demonstrate high device yield and strain endurance for GSETs. We believe that GSETs can significantly expand the application space for graphene-based technologies beyond what is currently envisioned.