Barrierless Cu-Ni-Nb thin films on silicon with high thermal stability and low electrical resistivity
Barrierless Cu-Ni-Nb thin films on silicon with high thermal stability and low electrical resistivity
复制标题
硅基无阻挡层 Cu-Ni-Nb 薄膜，具有高热稳定性和低电阻率
DOI：
10.1557/jmr.2013.355
复制
发表时间：
2013-12
影响因子：
2.7
通讯作者：
Chuang Dong
中科院分区：
文献类型：
--
作者：
Li Jun Liu;Cui Min Bao;Jinn P. Chu;Chuang Dong
In this paper, we demonstrate a thin film Cu-Ni-Nb alloy deposited directly on silicon, without a designated barrier, showing very high thermal stability at a temperature up to 700 °C for 1 h. Thin [Nb-Ni_12]Cu_x films were sputter deposited and annealed,
