Deterministic fabrication of circular Bragg gratings coupled to single quantum emitters via the combination of in-situ optical lithography and electron-beam lithography
Deterministic fabrication of circular Bragg gratings coupled to single quantum emitters via the combination of in-situ optical lithography and electron-beam lithography
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DOI：
10.1063/1.5050344
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发表时间：
2019-01
影响因子：
3.2
通讯作者：
Sascha Kolatschek;Stefan Hepp;Marc Sartison;M. Jetter;P. Michler;S. Portalupi
中科院分区：
文献类型：
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作者：
Sascha Kolatschek;Stefan Hepp;Marc Sartison;M. Jetter;P. Michler;S. Portalupi
在目前的工作中，我们通过采用最先进的低温原位光学光刻和电子束光刻相结合，研究了确定性预选的 In(Ga)As/GaAs 量子点 (QD) 与低 Q 圆形布拉格光栅腔的耦合。通过精确的干涉位置读数准确确定 QD 位置，确保腔模式和量子发射器之间的空间重叠。同时，利用电子束光刻的高精度来制造腔体。为了优化光谱重叠，在腔体制造之前，进行有限差分时域模拟来估计腔模式的光谱位置。据报道，对于确定性定位的腔，Purcell 因子为 2，计数率增加，其中发射线相对于腔模式失谐 3.9 nm。对于大失谐的这种不可忽略的珀塞尔增强以及因此可以实现的大范围指向了使用腔来同时增强来自空间上位于模式最大值的相同量子发射器的光谱不同跃迁的可能性。此外，还研究了腔膜的弯曲以及对腔模和 QD 发射的影响。在目前的工作中，我们通过采用最先进的低温原位光学光刻和电子束光刻相结合，研究了确定性预选的 In(Ga)As/GaAs 量子点 (QD) 与低 Q 圆形布拉格光栅腔的耦合。通过精确的干涉位置读数准确确定 QD 位置，确保腔模式和量子发射器之间的空间重叠。同时，利用电子束光刻的高精度来制造腔体。为了优化光谱重叠，在腔体制造之前，进行有限差分时域模拟来估计腔模式的光谱位置。据报道，对于确定性定位的腔，Purcell 因子为 2，计数率增加，其中发射线相对于腔模式失谐 3.9 nm。这种不可忽视的 Purcell 增强对于大的失谐，因此，大的 r...
In the present work, we investigate the coupling of deterministically pre-selected In(Ga)As/GaAs quantum dots (QDs) to low Q circular Bragg grating cavities by employing a combination of state-of-the-art low-temperature in-situ optical lithography and electron-beam lithography. The spatial overlap between the cavity mode and quantum emitter is ensured through the accurate determination of the QD position via precise interferometric position readout. Simultaneously, the high precision of the electron-beam lithography is exploited for the cavity fabrication. In order to optimize the spectral overlap, prior to cavity fabrication, finite-difference time-domain simulations are performed to estimate the spectral position of the cavity mode. A Purcell factor of 2 together with an increased count rate is reported for a deterministically positioned cavity where the emission line is detuned by 3.9 nm with respect to the cavity mode. This non-negligible Purcell enhancement for large detunings and, thus, the large range where this can be achieved points towards the possibility of using the cavity for the simultaneous enhancement of spectrally distinct transitions from the same quantum emitter located spatially in the mode maximum. Furthermore, investigations on the bending of the cavity membrane and the effects on the cavity mode and QD emission are presented.In the present work, we investigate the coupling of deterministically pre-selected In(Ga)As/GaAs quantum dots (QDs) to low Q circular Bragg grating cavities by employing a combination of state-of-the-art low-temperature in-situ optical lithography and electron-beam lithography. The spatial overlap between the cavity mode and quantum emitter is ensured through the accurate determination of the QD position via precise interferometric position readout. Simultaneously, the high precision of the electron-beam lithography is exploited for the cavity fabrication. In order to optimize the spectral overlap, prior to cavity fabrication, finite-difference time-domain simulations are performed to estimate the spectral position of the cavity mode. A Purcell factor of 2 together with an increased count rate is reported for a deterministically positioned cavity where the emission line is detuned by 3.9 nm with respect to the cavity mode. This non-negligible Purcell enhancement for large detunings and, thus, the large ra...