The impact of inverter-like transitions on device TDDB and ring oscillators
The impact of inverter-like transitions on device TDDB and ring oscillators
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类似反相器的转换对器件 TDDB 和环形振荡器的影响
DOI：
10.1109/irps.2015.7112803
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Y. Lee
中科院分区：
文献类型：
--
作者：
T. Yew;Y. Huang;M. Hsieh;W. Wang;Y. Lee
传统的离散器件的时间相关介质击穿（TDDB）测试通常将源极和漏极联系在一起，即Vds = 0V。然而，这种情况在开关逻辑电路中很少见到。为了模拟电路中开关器件的真实行为，构造了一个类似逆变器的64位交流TDDB测试阵列。虽然结果不仅包括TDDB和BTI，还包括HCI的综合效应，但也更加真实。在本文中，我们研究了瞬态HCI和非状态半周期Vgd辅助恢复对TDDB和电压加速因子（VAF）的影响。另一种捕捉一组设备的集体行为的简单阵列是环形振荡器（RO）。RO本身很容易实现，并且具有高频应力的特点。来自离散器件阵列和ro的TDDB数据集进行了比较，以相互验证。实验结果表明：a)无论直流[1-2]还是交流信号施加到漏极，频率依赖性都存在；b)在HCI高达几百MHz的情况下，漏极侧去捕获仍然可以延长TDDB的寿命。HCI控制可能只发生在更高频率的GHz领域。
Conventional time dependent dielectric breakdown (TDDB) test for discrete device usually ties source and drain together, i.e. Vds = 0V. However, this condition is seldom seen in a switching logic circuit. To mimic the true behavior of a switching device in a circuit, an inverter-like AC TDDB 64-bit test array is constructed. Although this result in not only TDDB and BTI but also the combined effect of HCI, it is more realistic as well. In this paper, we investigated the impacts of HCI during transient and Vgd assisted recovery during off-state half cycle on TDDB and voltage acceleration factor (VAF). Another simple array to catch the collective behavior of a group of devices is ring oscillator (RO). RO itself is easy to be implemented and characterized for high frequency stress. TDDB data sets from discrete device array and ROs are compared to validate each other. Experiment results show a) frequency dependence exists regardless DC [1-2] or AC signal applied to drain, b) with the presence of HCI up to few hundred MHz, drain side de-trapping still lengthen TDDB lifetime. HCI domination might only occur at even higher frequency in GHz realm.