Band-gap energy of In x Ga 1 − x N y As 1 − y as a function of N content
Band-gap energy of In x Ga 1 − x N y As 1 − y as a function of N content
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In x Ga 1 − x N y As 1 − y 的带隙能量与 N 含量的函数关系
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
G. Sproule
中科院分区：
文献类型：
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作者：
J. Duboz;J. Gupta;Z. Wasilewski;J. Ramsey;Robin L. Williams;G. Aers;B. Riel;G. Sproule
InGaNAs的带隙能量随着N含量以比GaNAs小的速率减小。报道了GaAs（001）衬底上应变InGaNAs/GaAs量子阱威尔斯的精确吸收测量结果，并从N能级与γ导带之间的排斥作用的角度对测量结果进行了解释. In含量越高，两个能级之间的能量分离越大，因此氮的导入效果显著降低。为了得到实验结果的定量描述，该模型包括对局部N环境的详细描述。结果表明，在我们用分子束外延生长的InGaNAs/GaAs量子威尔斯阱中，N组态应该接近统计组态。用这个模型来解释退火对能带结构的影响，我们的结论是，平均而言，N原子在退火过程中获得了一个额外的最近邻In原子，导致了20- 30 meV的适度大的带隙蓝移。
The band-gap energy of InGaNAs decreases with N content at a smaller rate than that of GaNAs. Precise absorption measurements in strained InGaNAs/GaAs quantum wells on GaAs(001) are reported, and the result is explained in the frame of the repulsion between the nitrogen level and the \ensuremath{\Gamma} conduction band. As the energy separation between both levels is larger when the In content increases, the effect of introducing nitrogen is significantly reduced. In order to get a quantitative description of experimental results, the model includes a detailed description of the local N environment. Results suggest that in our InGaNAs/GaAs quantum wells grown by molecular beam epitaxy, the N configuration should be close to the statistical one. Using this model to explain the effect of annealing on band structure, we conclude that, on average, N atoms gain one additional nearest-neighbor In atom during the annealing, leading to a moderately large band-gap blueshift of 20--30 meV.