Photoemission study of Al adlayers on Mn
Photoemission study of Al adlayers on Mn
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Mn 上 Al 吸附层的光电子研究
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
S. R. Barman
中科院分区：
文献类型：
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作者：
R. Dhaka;A. Shukla;K. Horn;S. R. Barman
Al overlayers上的Mn，研究了光电子能谱，显示出大的降低的Al 2 p核心能级结合能由0.5 eV在亚单层（0.1 ML）覆盖。结合能随覆盖度的增加而增加，在1.3ML时达到体Al值。Al 2 p芯能级谱显示出与界面处不同化学环境相关的额外组分，其强度随着Al覆盖度的增加而降低。Al相关的等离子体损失特征出现在1 ML以上。目前的结果被解释由一个强大的Al s，p-Mn 3d杂化在亚单层覆盖由于界面合金化，其对光谱的影响是占主导地位的金属键合在Al层的覆盖范围增加。的价带谱表明系统的抑制锰3d样的状态和出现的抛物线自由电子样的铝态密度。
Al overlayers on Mn, studied by photoemission spectroscopy, show a large lowering of the Al 2p core-level binding energy by 0.5 eV at submonolayer (0.1 ML) coverage. The binding energy increases with coverage and reaches the bulk Al value at ≈1.3 ML. The Al 2p core-level spectrum exhibits extra components related to the different chemical environment at the interface, which decrease in intensity with increasing Al coverage. The Al related plasmon loss features appear above 1 ML. The present results are explained by a strong Al s, p-Mn 3d hybridization at the submonolayer coverage due to interface alloying, whose influence on the spectra is dominated by metallic bonding in the Al layer as coverage increases. The valence-band spectra demonstrate systematic suppression of Mn 3d-like states and emergence of a parabolic free-electron-like Al density of states.