Effect of growth conditions on the electrical properties of Nb/Al-oxide/Nb tunnel junctions
Effect of growth conditions on the electrical properties of Nb/Al-oxide/Nb tunnel junctions
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生长条件对 Nb/Al 氧化物/Nb 隧道结电性能的影响
DOI：
10.1109/77.403052
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发表时间：
1995
影响因子：
1.8
通讯作者：
A. Kleinsasser
中科院分区：
文献类型：
--
作者：
W. H. Mallison;R.E. Miller;A. Kleinsasser
本文研究了Nb/AlO/sub_x//Nb约瑟夫森隧道结的临界电流密度J/sub_c/与生长过程中衬底温度T/sub_s/和氧暴露量E（氧化时间与压力的乘积）的关系。在低氧/sub 2/暴露下，J/sub c/对暴露敏感，J/sub c/spl prop/E/sup-1. 6/与温度无关（77 K<T/sub s/<42 0 K）。在高氧/sub 2/暴露下，J/sub c/强烈地依赖于温度，而对暴露的依赖性较弱：当T/sub s/=290 K时，J/sub c//spl prop/E/sup-0. 4/，而当T/sub s/=77 K时，J/sub c/与暴露无关。<<ETX>>
We have investigated the dependence of the critical current density J/sub c/ of Nb/AlO/sub x//Nb Josephson tunnel junctions on substrate temperature T/sub s/ and oxygen exposure E (the product of oxidation time and pressure) during growth. For low O/sub 2/ exposures, J/sub c/ depended sensitively on exposure, J/sub c//spl prop/E/sup -1.6/, independent of temperature for 77 K<T/sub s/<420 K. For high O/sub 2/ exposures, J/sub c/ depended strongly on temperature, with a weaker dependence on exposure: For T/sub s/=290 K, J/sub c//spl prop/E/sup -0.4/, while for T/sub s/=77 K, J/sub c/ was independent of exposure.<<ETX>>