Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes
Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes
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蓝色(AlGaIn)N发光二极管I-V特性与内量子效率的相关性研究
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
S. Katz
中科院分区：
文献类型：
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作者：
M. Binder;B. Galler;M. Furitsch;J. Off;J. Wagner;R. Zeisel;S. Katz
我们研究了(AlGaIn)N多量子阱发光二极管的电学和光学特性。通过使用铂作为p触点金属，最大限度地减少了接触效应，理想系数低至1.1。与半导体基本理论相一致，发现了理想因子与小电流效率之间的关系。我们能够利用一个双二极管模型来模拟实验中的七个数量级的电流-电压特性。该模型能够很好地预测出纯电导出参数在中等电流密度下的内部量子效率。
We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.