Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport
Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport
复制标题
具有三明治式多量子阱结构的高效 InGaN 绿色 LED 的实现：增强的井间载流子传输的作用
DOI：
10.1021/acsphotonics.8b01040
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发表时间：
2019-01-01
期刊：
影响因子：
7
通讯作者：
Jiang, Fengyi
中科院分区：
文献类型：
--
作者：
Lv, Quanjiang;Liu, Junlin;Jiang, Fengyi
The potential of multicolor semiconductor electroluminescence in solid-state lighting has been extensively pursued due to the energy-saving and smart-lighting as compared to conventional phosphor-converted white light sources. Here, we demonstrate a highly efficient 525 nm GaN-based green light-emitting diode (LED) with a sandwich-like multiple quantum well (MQW) structure grown on patterned Si(111) substrates. Performance enhancement can be achieved by adjusting the thicknesses of the three quantum barriers close to p-GaN in the interior of the sandwich MQW. Samples A, B, and C, with an optimized barrier thickness of 13, 10, and 8 nm, showed peak external quantum efficiency (EQE) values of 55.6%, 56.2%, and 49.0%, respectively. Under normal working conditions (350 mA, current density 35 A/cm(2)), the output power, EQE, forward voltage, and dominant wavelength of the sample representing the best performance were 306.0 mW, 37.0%, 2.76 V, and 525 nm, respectively. This work might provide an economically feasible way to realize volume-produce of highly efficient InGaN green LEDs on silicon substrates.
