Characterization of CdMnTe Planar Nuclear Detectors Grown by Vertical Bridgman Technique
Characterization of CdMnTe Planar Nuclear Detectors Grown by Vertical Bridgman Technique
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DOI:
10.1109/nss/mic42101.2019.9059615
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发表时间:
2019-10
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通讯作者:
S. Egarievwe;U. Roy;E. Agbalagba;Keiandrea L. Dunning;Oghaghare K. Okobiah;Mordecai B. Israel;Mebougna L. Drabo;R. James
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作者:
S. Egarievwe;U. Roy;E. Agbalagba;Keiandrea L. Dunning;Oghaghare K. Okobiah;Mordecai B. Israel;Mebougna L. Drabo;R. James
Cadmium manganese telluride (CdMnTe) crystals are expected to be homogenous in structure due to the segregation coefficient of Mn in CdTe, which is about 1.0. This could translate in the growth of large-volume CdMnTe crystals free of defects that currently limit X-ray and gamma-ray detection efficiencies. The present characterization experiments show results on CdMnTe planar detectors grown by the vertical Bridgman technique. The CdMnTe crystal used in the experiments was mostly free of tellurium inclusions and highangle grain boundaries. We recorded an energy resolution of 9.2% FWHM for the 59.5-keV gamma-peak of 241Am for the planar detector. We also resolved peaks at energies below the 59.5-keV peak.