An improved optically controlled phase shifter on Si wafer

An improved optically controlled phase shifter on Si wafer
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硅片上改进的光控移相器

DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
K. Chan
K. Chan
中科院分区：
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文献类型：
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作者：
H. P. Li;K. Chan

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报道了一种改进的光控微带叉指间隙结构在高阻硅衬底上的传输特性。在低至8 mW的光控功率照射下，在信号幅度基本不变的情况下，获得了最大的信号相位变化37°。该器件有可能被用作光控移相器。《Wiley期刊》，Inc.微波OPT Technol Lett 44：540-541,2005；在线发表在Wiley InterScience(www.intercience.wiley.com)上。DOI 10.1002/MOP.20690
The transmission characteristics of an improved optically controlled microstrip interdigital gap structure on a high‐resistivity silicon substrate are reported. When irradiated with an optically controlled power as low as 8 mw, a maximum signal‐phase change of 37° is obtained while the signal amplitude remains nearly constant. The proposed device can potentially be used as an optically controlled phase shifter. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 540–541, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20690